Design of 9T SRAM Cell for Low Power Portable Healthcare Applications

Abstract

Power has been a key issue in SoC designs with the modern-day sub-micron technologies. Thus, it has become significant to control the power and address the power dissipation throughout the design cycle right from the architectural level. For 180nm and below technologies, leakage is the main factor that controls the dynamic power and contributes to almost or more than 50% of total power dissipation. In several latest high-performance designs, the leakage component of power consumption is similar to the switching element. Body area networks(BAN’s) which is a Biomedical application,  there is a need for low power efficient SRAM cells for effective battery lives of BAN sensor nodes. This report has proposed a bit-interleaving supporting, robust, low power single-ended 9T (SE9T) bit cell. This bit cell design metrics are equated with multiple bit cells such as the 7T, FD8T, and SEDF9T cells for comparative analysis. The simulations were carried out using Cadence virtuoso at 90nm CMOS GPDK. Power, Read current and read access time of SE9T SRAM results are obtained and compared with existing 6T,7T, and 8T SRAM Cells. The result shows our proposed SE9T SRAM has produced less power.